imported>John R. Brews |
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| ==Devices== | | ==Devices== |
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| |Fermi function.PNG|Fermi occupancy function ''vs''. energy departure from Fermi level in volts for three temperatures | | |Fermi function.PNG|Fermi occupancy function ''vs''. energy departure from Fermi level in volts for three temperatures |
| |FCC Fermi surface.PNG|Fermi surface in '''k'''-space for a nearly filled band in the face-centered cubic lattice | | |FCC Fermi surface.PNG|Fermi surface in '''k'''-space for a nearly filled band in the face-centered cubic lattice |
| | |Electron probabilities in GaAs quantum well.png|Electron probabilities in lowest two quantum states of a 160Ǻ GaAs quantum well in a GaAs-GaAlAs quantum heterostructure. |
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| | ==More devices== |
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| | |caption=More devices |
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| | |Silicon conduction band ellipsoids.JPG|A constant energy surface in the silicon conduction band consists of six ellipsoids. |
| | |Planar Schottky diode.PNG|Planar Schottky diode with ''n<sup>+</sup>''-guard rings and tapered oxide. |
| | |Schottky & pn diode IV curves.PNG|Comparison of Schottky and ''pn''-diode current voltage curves. |
| | |Schottky barrier height.PNG|Schottky barrier formation on ''p''-type semiconductor. Energies are in eV. |
| | |Schottky barrier (forward bias).PNG|Schottky diode under forward bias ''V<sub>F</sub>''. |
| | |Schottky barrier (reverse bias).PNG|Schottky diode under reverse bias ''V<sub>R</sub>''. |
| | |Breakdown field vs bandgap.PNG|Critical electric field for breakdown ''versus'' bandgap energy in several materials. |
| | |Schottky barrier vs. electronegativity.PNG|Schottky barrier height ''vs.'' metal electronegativity for some selected metals on ''n''-type silicon. |
| | |Schottky barrier on p-SiC.PNG|Theoretical dependence of Schottky barrier heights for diodes using ''p''-SiC ''vs.'' electronegativity of the metal according to Mönch |
| | |Three-phase CCD.PNG|Three phase CCD. ''Top'': illumination ''Bottom'': Charge transfer |
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Latest revision as of 03:07, 22 November 2023
The account of this former contributor was not re-activated after the server upgrade of March 2022.
Devices
| Devices
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(PD) Image: John R. Brews
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Mesa diode structure (top) and planar diode structure with guard-ring (bottom).
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(PD) Image: John R. Brews
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(PD) Image: John R. Brews
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Gummel plot and current gain for a GaAs/AlGaAs heterostructure bipolar transistor.
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(PD) Image: John R. Brews
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Quasi-Fermi levels and carrier densities in forward biased pn-diode.
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(PD) Image: John R. Brews
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Cross section of MOS capacitor showing charge layers
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(PD) Image: John R. Brews
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Three types of MOS capacitance vs. voltage curves. VTH = threshold, VFB = flatbands
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(PD) Image: John R. Brews
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Small-signal equivalent circuit of the MOS capacitor in inversion with a single trap level
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(PD) Image: John R. Brews
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A modern MOSFET
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(PD) Image: John R. Brews
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A power MOSFET; source and body share a contact.
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(PD) Image: John R. Brews
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Two bipolar transistor modes, showing extrapolation of asymptotes to the Early voltage.
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(PD) Image: John R. Brews
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Channel length modulation in 3/4μm technology.
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(PD) Image: John R. Brews
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Early voltage for MOSFETs from a 0.18μm process as a function of channel strength.
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(CC) Image: John R. Brews
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Calculated density of states for crystalline silicon.
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(CC) Image: John R. Brews
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Field effect: At a gate voltage above threshold a surface inversion layer of electrons forms at a semiconductor surface.
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(PD) Image: John R. Brews
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Occupancy comparison between n-type, intrinsic and p-type semiconductors.
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(PD) Image: John R. Brews
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Nonideal pn-diode current-voltage characteristics
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(PD) Image: John R. Brews
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Band-bending diagram for pn-junction diode at zero applied voltage
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(PD) Image: John R. Brews
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Band-bending for pn-diode in reverse bias
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(PD) Image: John R. Brews
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Quasi-Fermi levels in reverse-biased pn-junction diode
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(PD) Image: John R. Brews
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Band-bending diagram for pn-diode in forward bias
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(PD) Image: John R. Brews
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Fermi occupancy function vs. energy departure from Fermi level in volts for three temperatures
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(PD) Image: John R. Brews
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Fermi surface in k-space for a nearly filled band in the face-centered cubic lattice
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(PD) Image: John R. Brews
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Electron probabilities in lowest two quantum states of a 160Ǻ GaAs quantum well in a GaAs-GaAlAs quantum heterostructure.
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More devices
| More devices
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(PD) Image: John R. Brews
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A constant energy surface in the silicon conduction band consists of six ellipsoids.
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(PD) Image: John R. Brews
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Planar Schottky diode with n+-guard rings and tapered oxide.
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(PD) Image: John R. Brews
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Comparison of Schottky and pn-diode current voltage curves.
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(PD) Image: John R. Brews
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Schottky barrier formation on p-type semiconductor. Energies are in eV.
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(PD) Image: John R. Brews
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Schottky diode under forward bias VF.
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(PD) Image: John R. Brews
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Schottky diode under reverse bias VR.
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(PD) Image: John R. Brews
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Critical electric field for breakdown versus bandgap energy in several materials.
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(PD) Image: John R. Brews
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Schottky barrier height vs. metal electronegativity for some selected metals on n-type silicon.
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(PD) Image: John R. Brews
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Theoretical dependence of Schottky barrier heights for diodes using p-SiC vs. electronegativity of the metal according to Mönch
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(PD) Image: John R. Brews
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Three phase CCD. Top: illumination Bottom: Charge transfer
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.PNG)
.PNG)
