Schottky diode/Related Articles: Difference between revisions
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imported>John R. Brews |
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{{r|Semiconductor diode}} | {{r|Semiconductor diode}} | ||
{{r|MOS capacitor}} | {{r|MOS capacitor}} | ||
{{r|MOSFET}} | |||
{{r|Semiconductor}} | {{r|Semiconductor}} | ||
{{r|Electronic band structure}} | {{r|Electronic band structure}} | ||
{{r|Fermi function}} | {{r|Fermi function}} | ||
Revision as of 21:27, 10 April 2011
- See also changes related to Schottky diode, or pages that link to Schottky diode or to this page or whose text contains "Schottky diode".
Parent topics
Subtopics
- Semiconductor diode [r]: Two-terminal device that conducts current in only one direction, made of two or more layers of material, of which at least one is a semiconductor. [e]
- MOS capacitor [r]: A two-terminal device consisting of three layers: a metal gate, a semiconducting body and a separating insulator, often an oxide. [e]
- MOSFET [r]: A type of field-effect transistor with four electrical contacts and three layers: a metal top layer (connected to the gate contact),separated by an insulating layer (usually an oxide layer) from a semiconductor layer (connected to the body contact). The gate voltage switches "on" and "off" the electrical connection between a source and drain contact at the semiconductor surface. [e]
- Semiconductor [r]: A substance (usually a solid) with electrical conductivity intermediate between metals and insulators. [e]
- Electronic band structure [r]: The very closely spaced energy levels available to electrons in solids, which are separated from each other by energy gaps. [e]
- Fermi function [r]: The equilibrium occupancy of an energy level in a system of independent fermions at a fixed temperature. [e]