User:Lars Sundnes Løvlie: Difference between revisions
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== Silicon Carbide == | == Silicon Carbide == | ||
[[Image:Silicon carbide single crystal.jpg|right|thumb| | [[Image:Silicon carbide single crystal.jpg|right|thumb|300px|{{#ifexist:Template:Silicon carbide single crystal.jpg/credit|{{Silicon carbide single crystal.jpg/credit}}<br/>|}}Silicon carbide single crystal for electronic purposes. Image taken after crystallization, and before cutting into thin wafers.]] | ||
Silicon carbide (SiC) is a mineral which occurs extremely rarely in nature. When it does it is referred to as [[moissanite]]. It is probably most commonly known for its use as an abrasive due to the extreme hardness of the material, which is only exceeded by the hardness of diamond. | Silicon carbide (SiC) is a mineral which occurs extremely rarely in nature. When it does it is referred to as [[moissanite]]. It is probably most commonly known for its use as an abrasive due to the extreme hardness of the material, which is only exceeded by the hardness of diamond. |
Revision as of 13:42, 10 May 2008
Bio
Hi!
My name is Lars Løvlie. I am very interested in contributing to the Citizendium, since my efforts to contribute to Wikipedia has left me frustrated at the lack of experts to end deadlocked discussions. I am hoping that the more ordered society in CZ will keep me more motivated.
Born and raised in Volda, Norway [1], I live in Oslo[2] and work on a phd in semiconductor physics at the University of Oslo, Centre for materials research and nanotechnology[1]. I hold an M.Sc. in electrical engineering (semiconductors).
This bio will be updated with more information in time.
References
Test-page for articles (ToDo)
Silicon Carbide
Silicon carbide (SiC) is a mineral which occurs extremely rarely in nature. When it does it is referred to as moissanite. It is probably most commonly known for its use as an abrasive due to the extreme hardness of the material, which is only exceeded by the hardness of diamond.
However, SiC is also being researched extensively for applications as a semiconductor for applications requiring high power, high frequency or a large degree of chemical inertness.