User:John R. Brews/Devices

Devices

Devices

(PD) Image: John R. Brews Mesa diode structure (top) and planar diode structure with guard-ring (bottom).     (PD) Image: John R. Brews A planar bipolar junction transistor as might be constructed in a integrated circuit.     (PD) Image: John R. Brews Gummel plot and current gain for a GaAs/AlGaAs heterostructure bipolar transistor.     (PD) Image: John R. Brews Quasi-Fermi levels and carrier densities in forward biased pn-diode.     (PD) Image: John R. Brews Cross section of MOS capacitor showing charge layers     (PD) Image: John R. Brews Three types of MOS capacitance vs. voltage curves. VTH = threshold, VFB = flatbands      (PD) Image: John R. Brews Small-signal equivalent circuit of the MOS capacitor in inversion with a single trap level     (PD) Image: John R. Brews A modern MOSFET     (PD) Image: John R. Brews A power MOSFET; source and body share a contact.     (PD) Image: John R. Brews Two bipolar transistor modes, showing extrapolation of asymptotes to the Early voltage.     (PD) Image: John R. Brews Channel length modulation in 3/4μm technology.     (PD) Image: John R. Brews Early voltage for MOSFETs from a 0.18μm process as a function of channel strength.     (CC) Image: John R. Brews Calculated density of states for crystalline silicon.     (CC) Image: John R. Brews Field effect: At a gate voltage above threshold a surface inversion layer of electrons forms at a semiconductor surface.     (PD) Image: John R. Brews Occupancy comparison between n-type, intrinsic and p-type semiconductors.     (PD) Image: John R. Brews Nonideal pn-diode current-voltage characteristics     (PD) Image: John R. Brews Band-bending diagram for pn-junction diode at zero applied voltage     (PD) Image: John R. Brews Band-bending for pn-diode in reverse bias     (PD) Image: John R. Brews Quasi-Fermi levels in reverse-biased pn-junction diode     (PD) Image: John R. Brews Band-bending diagram for pn-diode in forward bias     (PD) Image: John R. Brews Fermi occupancy function vs. energy departure from Fermi level in volts for three temperatures     (PD) Image: John R. Brews Fermi surface in k-space for a nearly filled band in the face-centered cubic lattice